Something I'd like to know is how everyone has suddenly come to the consensus conclusion that the N3B process is a failure,
This really hasn't been 'suddenly'. Early on in the process maturity phase most 'first of the generation' process nodes have substantially higher defect rates. For Example N5 vs N7 vs N6 below.
www.anandtech.com
The first instance of N5 plots better than N7 , but worse than N7+ and N6 ( these last two are refinements of N7).
N3 is a more substantial change than N5 vs N7. N3 was likely up over N7 defect rates at -2Q -1Q phase (most rumors in 2022 basically supported that) . N3B is far , far more at the limits of what the first generation EUV fab machines can do. TSMC has to resort to more extensive multipatterning because trying to 'print/draw' smaller than what the machine can 'naturally' do. N5 and N7 far more hit the sweet spot of what the first gen EUV fab machines can do. ( that's is why in part got a generation to generation drop at the start).
N3E eases back toward N5. The SRAM/Cache density is exactly the same.... so back to those 'old' alignments with the EUV machine sweet spot. ( N3B is trying to do better density by adding complexity. )
The other problem with N3B is that it takes longer to make ( +1 or so months. ). So getting from -2Q , -1Q from HVM is likely going to take longer. Quality improvements go up as process more wafers. But if it take substantively longer to process wafers then the QA feedback cycle is longer so progress is likely going to be slower.
N3B probably went HVM at a different density than N5 or N7 did. The 'failure' drumbeat has been about it not being the same as opposed to whether it is making relative progress or not. ( N3B is slower, but it is also slower to make. )
N3E is making same 'early' just in lower defect density that N7+ and N6 made because N7 took most of the 'experience learning curve' lumps. ( And also backtracking to loop in more N5 learning curve knowledge. )
N3B hasn't been getting better as fast as N5, N7 , N6 did so there is herd jumping on the bandwagon to declare it a 'failure'. Seems to be a decent overlap of same folks who heaped 'failure' on Intel "10nm" even after it moved to '10 nm SuperFin' ( and to Enhanced SuperFin that got relabeled Intel 7) . Once the early HVM is 'bad yields' then it is 'bad yields' forever. That isn't necessarily true.
so far as I know, there hasn't been a detailed breakdown of the A17 yet to determine whether or not it is impressive or not. I mean, sure, we have some guesses from the performance but we don't have any truly detailed analysis yet.
The recent 'shade' being thrown at N3B is coming from some of the folks who hyped up how N3 was going to bring 'micralous' , 'huge' , 'mind blowing' jumps in performance. Instead of admitting their hype wasn't well grounded , it is far easier to throw misdirection at the fab process.
Apple's designs are relatively cache/SRAM heavy. N3B only got increment improvement there and N3E will have
NONE. Apple could do refinements on cache access and internal networking to make a cache of the same capacity better, but they were not going to be able to take a larger 'hammer' to problems with an even larger cache this time.
N3B and N3E are going to be more expensive than N5/N4 were. So even bigger die sizes ( the crutch they have leaned on for last couple N5 family iterations) were likely out the window also. ( A17 is likely going to turn out same size or smaller than A16 ; basically a retreat back to 'normal' A-series die sizes. )
The other problem is monomanical obsession with narrow dimension benchmarks. If single thread doesn't jump xx % then it is a fail. Most likely Apple has multiple dimension , holistic system metrics they are evaluating on. The singular P core may not be the pinnacle of the priorities list. The single thread, hot rod drag racing crowd is fixated on peak clock rate jumps that N3E would bring, not paying much attention the SRAM stagnation also brings as a negative. Just focused on brute force overclocking their way out of issues.
P.S. N3B may not be a 'print money' fab process for TSMC , but it also seems on track to getting to break even. So throwing 'failure' at something that is at , or above , breakeven is at least somewhat misplaced.